First Advisor

W. Robert Daasch

Date of Publication

1-1-2010

Document Type

Thesis

Degree Name

Master of Science (M.S.) in Electrical and Computer Engineering

Department

Electrical and Computer Engineering

Language

English

Subjects

Random access memory -- Reliability, Random access memory -- Testing

DOI

10.15760/etd.341

Physical Description

1 online resource (x, 65 p.)

Abstract

Today, the use of embedded Dynamic Random Access Memory (eDRAM) is increasing in our electronics that require large memories, such as gaming consoles and computer network routers. Unlike external DRAMs, eDRAMs are embedded inside ASICs for faster read and write operations. Until recently, eDRAMs required high manufacturing cost. Present process technology developments enabled the manufacturing of eDRAM at competitive costs. Unlike SRAM, eDRAM exhibits retention time bit fails from defects and capacitor leakage current. This retention time fail causes memory bits to lose stored values before refresh. Also, a small portion of the memory bits are known to fail at a random retention time. At test conditions, more stringent than use conditions, if all possible retention time fail bits are detected and replaced, there will be no additional fail bits during use. However, detecting all the retention time fails requires long time and also rejects bits that do not fail at the use condition. This research seeks to maximize the detection of eDRAM fail bits during test by determining effective test conditions and model the failure rate of eDRAM retention time during use conditions.

Rights

In Copyright. URI: http://rightsstatements.org/vocab/InC/1.0/ This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).

Comments

Portland State University. Dept. of Electrical and Computer Engineering

Persistent Identifier

http://archives.pdx.edu/ds/psu/6812

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