First Advisor

Hormoz Zarefar

Date of Publication

1990

Document Type

Thesis

Degree Name

Master of Science (M.S.) in Mechanical Engineering

Department

Mechanical Engineering

Language

English

Subjects

Semiconductors -- Thermal properties, Thermal stresses

DOI

10.15760/etd.6099

Physical Description

1 online resource (57 p.)

Abstract

The failure of integrated circuit due to Silicon fracture is one of the problems associated with the production of a semiconductor device. The thermal stresses, which result in die cracking, are for the most part induced during the cooling process after attaching the die with Gold-Silicon solder. Major factors for stress generation in material systems are commonly large temperature gradients and substantial difference in coefficients of thermal expansion.

Rights

In Copyright. URI: http://rightsstatements.org/vocab/InC/1.0/ This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).

Comments

If you are the rightful copyright holder of this dissertation or thesis and wish to have it removed from the Open Access Collection, please submit a request to pdxscholar@pdx.edu and include clear identification of the work, preferably with URL

Persistent Identifier

http://archives.pdx.edu/ds/psu/24352

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