Sponsor
Portland State University. Department of Mechanical Engineering
First Advisor
Hormoz Zarefar
Date of Publication
1990
Document Type
Thesis
Degree Name
Master of Science (M.S.) in Mechanical Engineering
Department
Mechanical Engineering
Language
English
Subjects
Semiconductors -- Thermal properties, Thermal stresses
DOI
10.15760/etd.6099
Physical Description
1 online resource (57 p.)
Abstract
The failure of integrated circuit due to Silicon fracture is one of the problems associated with the production of a semiconductor device. The thermal stresses, which result in die cracking, are for the most part induced during the cooling process after attaching the die with Gold-Silicon solder. Major factors for stress generation in material systems are commonly large temperature gradients and substantial difference in coefficients of thermal expansion.
Rights
In Copyright. URI: http://rightsstatements.org/vocab/InC/1.0/ This Item is protected by copyright and/or related rights. You are free to use this Item in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you need to obtain permission from the rights-holder(s).
Persistent Identifier
http://archives.pdx.edu/ds/psu/24352
Recommended Citation
Duerr, Joachim Karl Wilhelm, "Finite element analysis of thermal stresses in semiconductor devices" (1990). Dissertations and Theses. Paper 4215.
https://doi.org/10.15760/etd.6099
Comments
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