Published In
IOP Conference Series: Materials Science and Engineering
Document Type
Article
Publication Date
3-2016
Subjects
Semiconductor films -- Mathematical models, Nanostructured materials, Strains and stresses, Semiconductors, Semiconductor wafers -- Design and construction
Abstract
effective and physically meaningful analytical predictive model is developed for the evaluation the lattice-misfit stresses (LMS) in a semiconductor film grown on a circular substrate (wafer). The two-dimensional (plane-stress) theory-of-elasticity approximation (TEA) is employed in the analysis. The addressed stresses include the interfacial shearing stress, responsible for the occurrence and growth of dislocations, as well as for possible delaminations and the cohesive strength of a buffering material, if any. Normal radial and circumferential (tangential) stresses acting in the film cross-sections and responsible for its short- and long-term strength (fracture toughness) are also addressed. The analysis is geared to the GaN technology.
DOI
10.1088/1757-899X/119/1/012029
Persistent Identifier
http://archives.pdx.edu/ds/psu/18797
Citation Details
Suhir, E., Nicolics, J., Khatibi, G., & Lederer, M. (2016, March). Semiconductor film grown on a circular substrate: predictive modeling of lattice-misfit stresses. In IOP Conference Series: Materials Science and Engineering (Vol. 119, No. 1, p. 012029). IOP Publishing.
Description
Originally appeared in IOP Conference Series: Materials Science and Engineering, Volume 119, Issue 1, pp. 012029, published by IOP Publishing.
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.
May be found at http://dx.doi.org/10.1088/1757-899X/119/1/012029.