Simulation Studies to Quantify the Impacts of Point Defects: an Investigation of Cs2agbibr6 Perovskite Solar Devices Utilizing Zno and Cu2o As the Charge Transport Layers

Authors

Tohidul Islam, Bangladesh University of Engineering and TechnologyFollow
Rafsun Jani, Bangladesh University of Engineering and TechnologyFollow
Syed Muhammad Al Amin, Bangladesh University of Engineering and TechnologyFollow
Kazi Md Shorowordi, Bangladesh University of Engineering and Technology
Sadiq Shahriyar Nishat, University of DhakaFollow
Alamgir Kabir, University of Dhaka
M. F. N. Taufique, Washington State University
Shaestagir Chowdhury, Portland State UniversityFollow
Sankha Banerjee, California State University, FresnoFollow
Saquib Ahmed, State University of New York College at Buffalo - Buffalo State CollegeFollow

Sponsor

SA acknowledges the support of the Clean Energy Grant from SUNY Buffalo State.

Published In

Computational Materials Science

Document Type

Citation

Publication Date

11-1-2020

Abstract

In this investigation, we have applied SCAPS and wxAMPS to simulate defects and probe a photovoltaic device utilizing Cs2AgBiBr6 as the active photovoltaic layer and ZnO and Cu2O as the electron transport layer (ETL) and hole transport layer (HTL) respectively. At the Cs2AgBiBr6 bulk we find that with increasing defect density, each defect level has increasing impact on all device performance parameters. At a given defect density however, we find that that deeper defects have more profound impacts on Jsc and FF, and minimal effects on Voc. Specific to the Cs2AgBiBr6 structure, we have investigated VAg (shallow defect), VBi (deep defect) and Bri (quasi-deep defect). Our results provide insight into the growth conditions of Cs2AgBiBr6, with a need to have both Br-poor and Bi-rich conditions, and a preference for the latter over the former to suppress the deeper defect. Exploring the performance kinetics at the ZnO/Cs2AgBiBr6 and Cs2AgBiBr6/Cu2O interfaces due to defect type, location and density, we showcase a remarkably stable behavior in both Voc and Jsc across both interfaces. We attribute this to much higher charge mobilities in the ZnO and Cu2O compared to the Cs2AgBiBr6 layer combined with similar defect densities across the layers, leading to effective charge extraction and minimal charge recombination.

Rights

© 2020 Elsevier B.V. All rights reserved.

Locate the Document

https://doi.org/10.1016/j.commatsci.2020.109865

DOI

10.1016/j.commatsci.2020.109865

Persistent Identifier

https://archives.pdx.edu/ds/psu/34515

Citation Details

Islam, T., Jani, R., Amin, S. M. A., Shorowordi, K. M., Nishat, S. S., Kabir, A., Taufique, M. F. N., Chowdhury, S., Banerjee, S., & Ahmed, S. (2020). Simulation studies to quantify the impacts of point defects: An investigation of Cs2AgBiBr6 perovskite solar devices utilizing ZnO and Cu2O as the charge transport layers. Computational Materials Science, 184, 109865. https://doi.org/10.1016/J.COMMATSCI.2020.109865